BYV32G-200 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 01 — 11 January 2011 4 of 11
NXP Semiconductors
BYV32G-200
Dual ultrafast power diode
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from
junction to mounting base
with heatsink compound; both diodes
conducting
--1.6K/W
with heatsink compound; per diode;
see Figure 3
--2.4K/W
Rth(j-a)
thermal resistance from
junction to ambient
-60-K/W
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width
003aac980
1
10?1
10
Zth(j-mb)
(K/W)
10?3
?6
10?2
tp
(s)
10
10
1
10?1
10?5
10?3
10?2
10?4
tp
t
=
p
T
P
t
T
δ
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